The charge transport properties of 2,2 0 ,6,6 0-tetraphenyldipyranylidene (DIPO-Ph⁴ ), a large planar quinö ıd p-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with a hole mobility up to 2 X 10 ₂ cm 2 V ₁1 and on/off ratio of 10 ₄. The transfer characteristics I ^d /V ^g present a clear hysteresis typical of a resistive memory effect. This memory effect is again observed by means of c-AFM in lateral mode using a nearby gold top-contact as the counter-electrode. The c-AFM current response recorded for variable distances d ¼ 0.5–9.0 mm between the AFM tip and the top electrode shows a resistive switching behavior in the low-voltage 0.0–3.0 V region. Repeated " write-read-erase-read " cycles performed at low frequency reveal a non-volatile memory effect in the form of high-resistance and low-resistance states with a stable on/off ratio of 10 ₂ during cycling operation.